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Nanometer Scale Induced Structure Between Amorphous Layers and Crystalline Materials

bullet Description of the Project
bullet This project is a jointly funded collaboration between the US-NSF -and the European Community
bullet The NanoAm Project Website is Here.
bullet Executive Summary of the Project
bullet Participants
bullet Our Work on the Project

[From H.-J. Kleebe, M. K. Cinibulk, R. M. Cannon, M. Rühle, 
J. Am. Ceram. Soc., 76 1969-77 (1993) ]

    The project research team is comprised of 7 teams from US academic, corporate, and government research institutions and 5 teams from EU academic and research institutions. The goal of this project is to cooperatively develop understanding of the material behavior of thin layers at interfaces and to disseminate our knowledge for industrial research and development and to the global educational infrastructure.

bullet Very Short Description
    In a nutshell, these thin layers exhibit properties and behavior (such as their collective atomic structure, their mechanical properties, and their interaction with light) that are not scientifically understood or characterized. These films exist in many technical devices and therefore determine their behavior and reliability. In fact, it may be possible to tailor their properties to get precise and predictable material behavior.
bullet Short Description
    Nanometer Scale Induced Structure Between Amorphous Layers and Crystalline Materials ) PIs from MIT, University of Missouri, Kansas City; Rutgers University; the University of Pennsylvania, LBNL, Dupont, Oxford University, the University of Karlsruhe, MPI Stuttgart, and CEA Saclay have formed a cooperative research team. Level of NSF funding: $1,703,818 over three years among the U.S. universities; the EU is providing 1,823,950 euro to the European researchers. This project will investigate the extraordinary properties of stable intergranular films. Anticipated benefits towards the foundation for the understanding and subsequent engineering of intergranular and surficial thin films are to be achieved with a collective approach of experimentation, theory and modeling, and subsequent experimental verification on selected specific material subsystems (silicate and titanate based systems) that may be extrapolated to general systems in which analogous films have been observed. The associated research groups from Europe and the US span the experimental and computational length and time scales that will be required for a successful complete understanding.

Our Work in the Areas of the Project

London Dispersion Forces and Hamaker Constants

bullet R. H. French, “Origins and Applications of London Dispersion Forces and Hamaker Constants in Ceramics”, Centennial Feature Article, Journal of the American Ceramic Society, 83, 9, 2117-46 (2000).  
bullet R. H. French, H. Müllejans, D. J. Jones, G. Duscher, R. M. Cannon, M. Rühle, “Dispersion Forces and Hamaker Constants for Intergranular Film in Silicon Nitride from Spatially Resolved-Valence Electron Energy Loss Spectrum Imaging”, Acta Materialia, 46, 7, 2271-87 (1998). 
bullet H. D. Ackler, R. H. French, Y. M. Chiang, "Comparison of Hamaker Constants for Ceramic Systems with Intervening Vacuum or Water: From Force Laws and Physical Properties", Journal of Colloid and Interface Science, 179, 460-69, (1996).
bullet C. Argento, R. H. French, "Parametric Tip Model and Force-Distance Relation for Hamaker Constant Determination from AFM", Journal of Applied Physics, 80, 6081-90 (1996). 
bullet R. H. French, R.. M. Cannon, L. K. DeNoyer, Y.-M. Chiang, "Full Spectral Calculation of Non-Retarded Hamaker Constants for Ceramic Systems from Interband Transition Strengths", Solid State Ionics, 75, 13-33, (1995).

Silicon Nitride

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R. H. French, H. Müllejans, D. J. Jones, G. Duscher, R. M. Cannon, M. Rühle, “Dispersion Forces and Hamaker Constants for Intergranular Film in Silicon Nitride from Spatially Resolved-Valence Electron Energy Loss Spectrum Imaging”, Acta Materialia, 46, 7, 2271-87 (1998). 

Silicon Carbide

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Silicon

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Strontium Titantate

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K. van Benthem, C. Elsässer, R. H. French, “Bulk Electronic Structure of SrTiO3: Experiment and Theory”, Journal of Applied Physics, 90, 12, 6156-64, (2001).

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K. van Benthem, R. H. French, W. Sigle C. Elsasser, M. Rühle, “Valence Electron Energy Loss Study of Fe Doped SrTiO3 and a S13 Boundary: Electronic Structure and Dispersion Forces”, Ultramicroscopy, 86, 3-4, 303-18, (2001). 

Reflection EELS

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Transmission EELS

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H. Müllejans, R. H. French, “Insights Into the Electronic Structure of Ceramics Through Quantitative Analysis of Valence Electron Energy-loss Spectroscopy (VEELS)”, Microscopy and Microanalysis, 6 (4), 297-306, (2000). 

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A. D. Dorneich, R. H. French, H. Müllejans, S. Loughin, M. Rühle, “Quantitative Analysis of Valence Electron Energy-Loss Spectra of Aluminum Nitride”, Journal of Microscopy, 191, 3, 286-96 (1998).

VUV Spectroscopy

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R. H. French, H. Müllejans, D. J. Jones, "Optical Properties of Aluminum Oxide: Determined from Vacuum Ultraviolet and Electron Energy Loss Spectroscopies", Journal of the American Ceramic Society, 81, 10, 2549-57, (1998).

Executive Summary

Nanometer Scale Induced Structure

Between

Amorphous Layers and Crystalline Materials

This work was supported by NSF Award DMR-0010062 in cooperation with EU Commission Contract G5RD-CT-2001-00586

     A complementary ensemble of capable EU and US groups present an integrated experimental and computational proposal to investigate the extraordinary properties of stable intergranular films. These films can have nanoscale structures and compositions that would not be stable as a bulk phase, and therefore can have physical properties that are not found in bulk phases. Furthermore, some physical attributes, such as film width, that are normally tailored by engineering processes, become an equilibrium quantity that are naturally uniform and highly tunable with composition. Because of nanometer length scales of these films and their unexpected physical properties (e.g., the dielectric properties of thin intergranular films cannot be extrapolated from known bulk values), development and integration into devices is expected to yield beneficial consequences.

     The existence of disordered stable interfacial and surficial films has been established experimentally in disparate material systems. The general behavior of the stabilized films is demonstrably dependent on their composition. Their stability is assumed to be associated with remnant order induced into their molecular structure from the crystalline materials proximate to them. Phenomenological theories can account for their stability; no general theory accounts for combined effects of crystallographic and imposed constraints, molecular structure, and composition. A satisfactory description of these interfaces has not been attained, not has sufficient data been collected to categorize their behavior thoroughly.

     Anticipated benefits towards the foundation for the understanding and subsequent engineering of intergranular and surficial thin films are to be achieved with a collective approach of experimentation, theory and modeling, and subsequent experimental verification on selected specific material subsystems (silicate and titanate based systems) that may be extrapolated to general systems in which analogous films have been observed. The associated research groups from Europe and the US span the experimental and computational length and time scales that will be required for a successful complete understanding. Many of the principals have been active leaders in the initial exploration of stable thin film properties.

     Spatially varying atomic ordering and composition, bonding and electronic structure, transport properties, dispersion and steric forces, bulk and gradient thermodynamic properties will be studied by combined techniques of EXAFS, EXELFS, ELNES, VEELS and VUV spectroscopies and HREM and computational microscopy on prepared controlled reference-standard materials. Models will be developed and correlated with experiments by combined ab-initio, density functional theory, OLCAO, molecular dynamics, and diffuse interface thermodynamics.

Participants

USA PIs (to be supported by NSF)

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W. Craig Carter              Materials Science and Engineering, 
                                        Massachusetts Institute of Technology, Cambridge MA

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Yet-Ming Chiang             Materials Science and Engineering, 
                                        Massachusetts Institute of Technology, Cambridge MA

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Wai-Yim Ching                Physics, University of Missouri, Kansas City, MO

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Dawn Bonnell                 Materials Science and Engineering, University of Pennsylvania

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Roger H. French             Materials Science and Engineering, University of Pennsylvania 
                                        and CR&D, Dupont, Philadelphia, PA

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Stephen H. Garofalini     Interfacial Molecular Science Laboratory, Ceramic and Materials Engineering, 
                                        Rutgers University, Piscataway, NJ

USA Group Members (not supported by NSF)

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Paul F. Becher                Structural Ceramics Group, Metals & Ceramics Division, ORNL,
                                        Oak Ridge, TN

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Rowland M. Cannon       Materials Sciences Division, Lawrence Berkeley National Laboratory, 
                                        Berkeley, CA

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Thomas M. Shaw,          IBM, T.J. Watson Laboratory, Yorktown, NY

European PIs (to be supported by EU: NANOAM GROW 200005,1)

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David J.H. Cockayne      Materials, Oxford University, Oxford, UK

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Martine Gautier-Soyer    DSM - DRECAM  SRSIM, CEA Saclay, Gif sur Yvette Cedex, France

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Michael J. Hoffmann       University of Karlsruhe, Germany

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Manfred Rühle,               Max-Planck-Institut für Metallforschung, Stuttgart, Germany

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Adrian P. Sutton,            Oxford University, Oxford, UK

Comment: (c) 2010 Roger H. French , frenchrh@lrsm.upenn.edu
All Rights Reserved, See Appropriate Use Page