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DEVELOPMENT OF NOVEL THIN FILMS MATERIALS AND
MICROSTRUCTURES FOR PHASE SHIFT PHOTOMASKS AND LOW k1 IC LITHOGRAPHY,
R. H. French, DuPont Co. Central Research,
Wilmington, DE 19880 and University of Pennsylvania, Materials Science Dept.
Philadelphia PA.
Abstract
Advances in photolithography for integrated circuit
fabrication achieve narrower printed linewidths by moving to shorter wavelengths
(365, 248, 193 & 157 nm) and using new lithographic concepts such as phase
interference contrast. The technological requirements are outlined in the International
Technology Roadmap for Semiconductors and define the technical
performance of, for example, phase shift masks at each technology node. To have
the technology needs clearly stated, with known dates to market and market sizes
is a tremendous opportunity for materials designers. Still many technological
strategies are pursued for each node, and developing a successful material that
will be accepted in commercial scale IC production involves rapid optimization
of multiple property requirements. Without versatile, flexible materials
technology, and rapid materials development, another technical approach will
succeed.
Examples of Cr-OCN graded films for 365nm, Si3N4/TiN
multilayer films for 248 and 193 nm will be contrasted with MoSiON and CrF2 films for attenuating phase shift lithography.
Development of a 157 nm Pellicle
- Joseph S. Gordon, a R. H. French b
- DuPont Photomasks, Inc. 4 Finance Drive, Danbury CT, 06810
- DuPont Co. Central Research and Development
Abstract
As the semiconductor industry continues to push to smaller
device geometries the wavelength of light used in the lithographic process is
moving to lower wavelengths and increasingly higher energy levels. As device
geometry decreases, contamination control becomes increasingly difficult issue.
157 nm lithography is predicted to be the method of choice for the 100 nm and 70
nm device nodes. Currently there are no known materials which have the necessary
transmissivity and durability at 157 nm required to produce suitable pellicles
for use as contamination control devices to protect the high resolution
photomasks used in the lithographic process. This paper overviews progress in
designing and developing 157 nm pellicles.
Semiconductor Photolithography
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The Lithography Process
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Layout of an Optical Stepper
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An ASML 193nm ArF Stepper/Scanner
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Low k1 Lithography: Sub Wavelength Printing |
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