Pb2Ru2O7
OP&ES Home Up AlN ES Al203 Absorption Al2O3-AlON-AlN Al2O3 High T Al2O3 S11 GB BBO LBO Cu on Al2O3 & AlN NbC Pb2Ru2O7 Polymers PolySilane Si3N4 SrTiO3 ES SrTiO3 GB TiO2 ES YAG Absorptiion ZrO2

 

Lead Ruthenate Thick Film Resistors

Y. M. Chiang, L. E. Silverman, R. H. French, R. M. Cannon, "The Thin Glass Film between Ultrafine Conductor Particles in Thick Film Resistors", Journal of the American Ceramic Society, 77, 1143-52 (1994). 

No Titania Additive                                                        With Titania Additive

Distribution in the apparent film thickness of glass films in samples with and without titania, measured from STEM bright field images under slight underfocus conditions.  As discussed in text, these results overestimate the absolute film thickness, but clearly show the greater average film thickness of the titania containing samples.

The Thin Glass Film between Ultrafine Particles in Thick Film Resistors'

 Yet-Ming Chiang

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139

Lee A. Silverman and Roger H. French

Central Research and Development , DuPont Company, Wilmington, DE 19880

Rowland M. Cannon

Lawrence Berkeley Laboratory, Berkeley, CA

 Abstract

 Thick film resistors are electrical composites containing ultra-fine particles of ruthenate conductor (Pb2Ru2O7 in the present materials) distributed in a highly modified silicate glass.  We show that conductor particles remain flocced in the absence of any applied or capillary pressures, but are separated at equilibrium by a nanometer thick film of glass.  Microstructures show evidence for liquid phase sintering, i.e. contact flattening of particles, under van der Waals attraction alone.  Titania addition, which in dilute concentrations markedly increases the resistivity, decreases the temperature coefficient of resistance, and improves voltage stability and noise, is found to increase the equilibrium film thickness between particles by a few angstroms.  STEM analyses show that the added titania preferentially concentrates in the silicate rich grain boundary film, as well as at particle-glass interfaces.  The roles of interparticle forces and adsorption on the glass film thickness with and without titania are discussed.  The large increase in resistivity caused by titania additions is attributed to the increase in film thickness as well as to local chemical changes of two possible types.  Titania enrichment within the glass film itself is expected to decrease the local ruthenium ion solubility, which along with the possible formation of a more insulating titania-substituted surface layer on ruthenate grains will decrease the tunneling conductivity between conductor grains.

Key words:  Grain boundaries, interfaces, thick film resistors, electrical composites,  electroceramics, nanocrystal, analytical electron microscopy.

Comment: (c) 2009 Roger H. French , frenchrh@lrsm.upenn.edu
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