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Electronic Structure of Silicon Nitride
Interband transition Strengths (Re[Jcv]) for the two Si3N4 samples and the SiYAlON Bulk Glass Sample.
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Interband transition strengths and the corresponding London dispersion spectra
for Si3N4 and an yttrium aluminum silicon oxynitride
glass. The Hamaker constant for
A(Si3N4 | Vac. | Si3N4) = 192 zJ, while the Hamaker
constant of YalSiON glass as the interlayer between the Si3N4 grains, is
STEM micrographs of the LaAl - Si3N4 sample showing the four interfaces, a) IF 1 to IF 3 and b) IF 4 where SR-VEEL spectrum images were acquired.
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Comment: (c) 2009 Roger H. French , frenchrh@lrsm.upenn.edu |
