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Schematic of VUV spectroscopy measurement of spectral
transmission or reflection.
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Schematic of VUV ellipsometry measurement of polarized
reflectance.
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R. H. French, R. C. Wheland, D. J. Jones, J. N. Hilfiker, R. A. Synowicki,
F. C. Zumsteg, J. Feldman, A. E. Feiring, "Fluoropolymers for 157nm
Lithography: Optical Properties from VUV Absorbance and Ellipsometry
Measurements", SPIE Proceedings: Microlithography 2000, to be
published.
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R. H. French, D. J. Jones, H. Müllejans, S.
Loughin, A. D. Dorneich, P. F. Carcia "Optical Properties of Aluminum
Nitride: Determined from Vacuum Ultraviolet Spectroscopy and Spectroscopic
Ellipsometry", Journal of Materials Research, 14,
4337-44, (1999).
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B. Johs, R. H. French, F. D. Kalk, W. A. McGahan, J. A. Woollam, "Optical Analysis of Complex Multilayer Structures Using Multiple Data
Types", Optical Interference Coatings, SPIE Vol. 2253, 1098-1106, (1994).
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B. Johs, R. H. French, F. D. Kalk, W. A. McGahan, J. A. Woollam, "Optical Analysis of Complex Multilayer Structures Using Multiple Data Types", Optical Interference Coatings, SPIE Vol. 2253, 1098-1106, (1994).
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Variable angle of incidence spectroscopic ellipsometry (VASE) is commonly used for multilayer optical analysis, but in some cases this experiment (performed in reflection) does not provide sufficient information for the unique determination of the thicknesses and optical constants of the films in the given multilayer. We have found that augmenting the VASE data with data from other optical experiments greatly increases the amount of information which can be obtained for multilayers, particularly when they are deposited on transparent substrates. In this work, we describe a formalism which allows us to quantitatively characterize complex multilayer structures by using combined reflection and transmission ellipsometry, reflection ellipsometry with the sample flipped over, and intensity transmission measurements. To demonstrate the usefulness of this capability, the analysis of a complex graded, absorbing thin film structure (a Cr-based phase-shifting photomask blank), is presented.
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